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Product Description
SGA-7489
Sirenza Microdevices SGA-7489 is a high performance SiGe heterojunction bipolar transistor MMIC amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Basic circuit operation is achieved with just a single supply voltage, DC blocking and bypass capacitors, a bias resistor, and a bias inductor. Simple capacitive tuning may be used to extend high OIP3 performance to 2GHz.
Gain, Return Loss, and Isolation vs. Frequency
30 25 20 VD=5.0V, ID=115mA (Typ), T LEAD=+25C
0
DC-3000 MHz Silicon Germanium HBT Cascadeable Gain Block
Product Features DC-3000 MHz Operation Very High IF Output IP3: 39dBm at 100MHz High Output IP3: +35.5 dBm typ. at 850 MHz Low Noise Figure: 3.3 dB typ. at 1950 MHz Applications Oscillator Amplifiers PA for Low / Medium Power Applications IF/ RF Buffer Amplifier Drivers for CATV Amplifiers LO Driver Amplifier
Min. 18.5 Ty p. 22.4 20.0 39.0 35.5 33.0 36.0 * 21.5 18.5 3000 1950 1950 1950 1950 4.7 103 10.3 9.0 15.0 11.0 23.0 3.3 5.0 115 82 4.3 5.3 127
o
Gain
Gain (dB)
Input Return Loss
-10
15 10 5
Isolation Output Return Loss
-15
-20
-25
0
0 500 1000 1500 2000 2500
-30 3000
Frequency (MHz)
Sy mbol P1dB
Parameter Output Pow er at 1dB Compression
Return Loss & Isolation (dB)
-5
Freq. (MHz) 850 1950 100 850 1950 1950 * 850 1950
Max.
Units dBm
OIP3
Output Third Order Intercept Point
* Using 2 GHz App.Ckt. (see page 5)
31.0 20.0 17.0
dBm
S21 Bandw idth IRL ORL S12 NF VD ID RTH, j-l
Small Signal Gain Determined by Return Loss (>9dB) Input Return Loss Output Return Loss Reverse Isolation Noise Figure, ZS = 50 Ohms Device Operating Voltage Device Operating Current Thermal Resistance (junction - lead)
23.0 20.0
dB M Hz dB dB dB dB V mA C/W
Test Conditions:
VS = 8 V ID = 115 mA Typ. Bias Resistance = 26 Ohms
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm TL = 25C ZS = ZL = 50 Ohms
NOTE: The recommended operating current in the preliminary datasheet was 130mA. Supplemental measurements have since shown that an operating current of 115mA results in optimal RF performance over temperature. Continued operation at 130mA is reliable, however, the recommended operating current has been changed to 115mA.
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101801 Rev C
Preliminary SGA-7489 DC-3000 MHz SiGe Amplifier Typical RF Performance at Key Operating Frequencies
Sy mbol Parameter Unit 100
Frequency Frequency (MHz) Frequency (MHz)(MHz)
500 850
1950
2400
G OIP3 P1dB IRL ORL S12 NF
Small Signal Gain Output Third Order Intercept Point Output Pow er at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure
dB dBm dBm dB dB dB dB
23.0 39.0 22.8 13.5 19.5 26.0 2.7
22.5 36.5 22.6 14.5 17.0 25.5 2.7
21.5 35.5 22.4 15.5 14.5 25.0 2.8
18.5 33.0 * 20.0 15.0 11.0 23.0 3.3
17.0 32.2 19.0 13.5 10.5 22.0
Test Conditions:
VS = 8 V ID = 115 mA Typ. Bias Resistance = 26 Ohms
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm TL = 25C ZS = ZL = 50 Ohms
* NOTE: An OIP3 of +36dBm at 1950 MHz is achieved using the tuned circuit shown on page 5.
Noise Figure vs. Frequency over Temperature
VD=5.0V, ID=115 mA (Typ.) at TLEAD=+25C
Absolute Maximum Ratings
Parameter Max. Device Current (ID) Max. Device Voltage (VD) Max. RF Input Pow er : ZL= 50 Ohms Max. RF Input Pow er : Load VSWR=10:1* Max. Junction Temp. (TJ)
Operating Temp. Range (TL)
Absolute Limit
170 mA
5.0 4.5 4.0
7V +16 dBm +2 dBm
+150C -40C to +85C +150C
NF (dB)
3.5 3.0 2.5 2.0 1.5 1.0 0 500 1000 1500 2000
Max. Storage Temp.
T LEAD
-40C +25C +85C
O p e r a t io n o f t his d e vic e b e y o nd a ny o ne o f t he s e limit s ma y c a us e permanent damage. For reliable continous operation, the device voltage must not exceed 5.3V and the device current must not exceed 143mA. Bias Conditions should also satisfy the follow ing expression: IDVD < (TJ - TL) / RTH, j-l *Note: Take into account out of band load VSWR presented by devices such as SAW filters to determine maximum RF input pow er. Reflected harmonic levels in saturation are significant.
Frequency (MHz)
OIP3 vs. Frequency over Temperature
VD=5.0V, ID=115 mA (Typ.) at TLEAD=+25C
P1dB vs. Frequency over Temperature
VD=5.0V, ID=115 mA (Typ.) at TLEAD=+25C
40.0 38.0 36.0
26.0 24.0 22.0
OIP3 (dBm)
34.0 32.0 30.0 28.0 26.0 0 500 1000 1500
P1dB (dBm)
-40C +25C +85C +25C Tuned Circuit
20.0 18.0 16.0 14.0 12.0
T LEAD
T LEAD
0 500 1000 1500 2000
-40C +25C +85C
2000
2500
2500
Frequency (MHz)
Frequency (MHz)
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-101801 Rev C
Preliminary SGA-7489 DC-3000 MHz SiGe Amplifier Typical RF Performance Over Temperature
(Bias: VS= 8.0 V, Bias Resistance=26 Ohms, ID= 115 mA )
|S | vs. Frequency
21
|S | vs. Frequency
11
30
0 -5
24 -10 |S21| (dB) 18 |S11| (dB)
+25C -40C +85C
-15 -20
12
TL
6 0 500 1000 1500 2000 Frequency (MHz)
-25 -30
TL
0 500 1000 1500 2000 Frequency (MHz)
+25C -40C +85C
2500
3000
2500
3000
|S | vs. Frequency
12
-10
0 -5
|S | vs. Frequency
22
-15 -10 |S12| (dB) |S22| (dB) -20 -15 -20 -25
TL
-30 0 500 1000 1500 2000 Frequency (MHz)
+25C -40C +85C
-25 -30
TL
0 500 1000 1500 2000 Frequency (MHz)
+25C -40C +85C
2500
3000
2500
3000
NOTE: Full S-parameter data available at www.sirenza.com
ID vs. VD Variation over Temperature
VSUPPLY = 8 V, Bias Resistance = 26 Ohms 150 140 130 120
+25C
Plot of VD vs. Temp. @ ID=115 mA
5.3 5.2
VD (Volts)
+85C
5.1 5.0 4.9 4.8 4.7 -40
ID (mA)
110 100 90 80 4.70
-40C
4.80
4.90
5.00 VD (Volts)
5.10
5.20
5.30
-15
10
35
60
85
Temperature (C)
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-101801 Rev C
Preliminary SGA-7489 DC-3000 MHz SiGe Amplifier Basic Application Circuit
RBIAS
1 uF 1000 pF
VS
ID CD R LDC LC
Application Circuit Element Values
Reference Designator Frequency (Mhz) 100 500 850 1950 2400
Bias Inductor
CB CD LC
1000 pF 100 pF 470 nH
220 pF 100 pF 68 nH
100 pF 68 pF 33 nH
68 pF 22 pF 22 nH
56 pF 22 pF 18 nH
RF in CB
1 SGA-7489 3 2
4
VD
RF out CB
Required Bias Resistance for ID=115mA Bias Resistance = RBIAS+ RLDC = ( VS-VD ) / ID Supply Voltage(VS) Bias Resistance 7V 17 8V 26 9V 35 12 V 61
VS
RBIAS
Gnd.
1 uF 1000 pF
Bias resistor improves current stability over temperature.
Mounting Instructions
1. Solder the copper pad on the backside of the device package to the ground plane. 2. Use a large ground pad area with many plated through-holes as shown. 3. We recommend 1 or 2 ounce copper. Measurement for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides.
A74
LC
CD
CB
CB
Pin #
Function RF IN
Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. For optimum RF performance, use via holes as close to ground leads as possible to reduce lead inductance.
Part Identification Marking The part will be marked with an A74 designator on the top surface of the package. 4
1
2, 4
GND
A74
1 2 3
2 1 3
3
RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation.
Appropriate precautions in handling, packaging and testing devices must be observed.
Caution: ESD sensitive
Part Number Ordering Information
Part Number SGA-7489 Reel Size 13" Devices/Reel 3000
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
4
http://www.sirenza.com
EDS-101801 Rev C
Preliminary SGA-7489 DC-3000 MHz SiGe Amplifier 2GHz Application Circuit
RB1 +8V RB2 CD1 CD2
2 GHz Application Circuit Component Values
Reference Designator
LC
Value 100 pF 1.2 pF 1.5 pF 0.1 uF 22 nH 27 Ohms, 1/2 W 610 Ohm 1/4 W
Manuf. ROHM ROHM ROHM ROHM TOKO ROHM ROHM
P/N MCH185A101JK MCH185A1R2JK MCH185A1R5JK MCH182FN1042K LL1608FS22NJ Type MRC 50 Type MRC 18
CD1, CB CM1
RF in
50 Ohms 14.5 Deg @ 2GHz
50 Ohms 34.1 Deg @ 2GHz
SGA7489
50 Ohms 34.1 Deg @ 2GHz
RF Out
CM2 CD2 LC RB1 RB2
CB CM
1
CB CM
2
Note: Separation Distance between via holes on board represents approx. 5.4 Degrees phase shift @ 2GHz for equivalent distance on microstrip. Board material is GETEK,e=4.1
VS
RB1 RB2
Gain, Return Loss, and Isolation vs. Frequency
A74
LC CM2
20
Output Return Loss
-5 -10 -15
15
CM1
CB
CB
10
Input Return Loss
-20 -25 -30 3000
5
Isolation
0 0 500 1000 1500 Frequency (MHz) 2000 2500
Typical RF Performance in Tuned 2GHz Application Circuit
Sy mbol Parameter Unit
Frequency Frequency Frequency (MHz)(MHz) (MHz) 1700 1950
2100
G OIP3 P1dB IRL S12 NF
Small Signal Gain Output Third Order Intercept Point Output Pow er at 1dB Compression Input Return Loss Reverse Isolation Noise Figure
dB dBm dBm dB dB dB
18.6 36.1 20.8 10 23.8 3.1
18.3 36.0 20.4 11.2 23.0 3.3
18.2 34.5 19.9 16.3 22.1 3.7
VS = 8 V = 115 mA Typ. IID = 80 mA Typ. D Test Conditions: VS = 8 V Test Conditions: Bias Resistance RBIAS = 39 Ohms = 26LOhms T = 25C
OIP Tone Spacing = 1 MHz, Pout per tone = 0 dBm OIP33 Tone Spacing = 1 MHz, Pout per tone = 0 dBm TL = 25C ZS = ZL = 50 Ohms ZS = ZL = 50 Ohms
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-101801 Rev C
Return Loss & Isolation (dB)
C D2 C D1
Gnd.
VD=5.0V, ID=115mA (Typ) at TLEAD=+25C 25
Gain
0
Gain (dB)
Preliminary SGA-7489 DC-3000 MHz SiGe Amplifier
Dimensions in inches [millimeters]
PCB Pad Layout
Dimensions in inches [millimeters] Refer to package drawing posted at www.sirenza.com for tolerances.
Nominal Package Dimensions
Bottom View
Side View
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
6
http://www.sirenza.com
EDS-101801 Rev C

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